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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTU12N06T
IXTY12N06T
V DSS
I D25
R DS(on)
= 60V
= 12A
≤ 85m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-251 (IXTU)
Symbol
Test Conditions
Maximum Ratings
G
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
60
60
V
V
D
S
D (TAB)
V GSM
Transient
± 20
V
I D25
I DM
I LRMS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
Package Current Limit, RMS TO-252
12
30
25
A
A
A
TO-252 (IXTY)
I AR
E AS
T C = 25 ° C
T C = 25 ° C
3
20
A
mJ
G
S
D (TAB)
P D
T C = 25 ° C
33
W
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T L
T SOLD
M d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Mounting torque
TO-251
TO-252
300
260
1.13/10
0.40
0.35
° C
° C
Nm/lb.in.
g
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 25 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 0.5 ? I D25 , Notes 1, 2
60
2.0
V
4.0 V
± 50 nA
1 μ A
100 μ A
85 m Ω
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
2008 IXYS CORPORATION All rights reserved
DS99947(4/08)
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相关代理商/技术参数
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IXTU2N80P 功能描述:MOSFET Polar MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTU44N10T 功能描述:MOSFET 44 Amps 100V 25.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTU55N075T 功能描述:MOSFET 55 Amps 75V 17.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTU64N055T 功能描述:MOSFET 64 Amps 55V 13 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV02N250S 功能描述:MOSFET N-Chan Pwr Mosfet 2500V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube